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| Transistor 2SA1791 Silicon PNP epitaxial planer type For high-frequency amplification Complementary to 2SC4656 1.60.15 Unit: mm s Features q q q 0.4 0.80.1 0.4 0.2-0.05 0.15-0.05 +0.1 High transition frequency fT. Small collector output capacitance Cob. SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. (Ta=25C) Ratings -50 -50 -5 -50 125 125 -55 ~ +125 Unit V V V mA mW C C 1.60.1 1.00.1 0.5 1 0.5 3 2 0.450.1 0.3 0.750.15 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg 1:Base 2:Emitter 3:Collector EIAJ:SC-75 SS-Mini Type Package Marking symbol : AL s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance (Ta=25C) Symbol ICBO ICEO VCBO VCEO VEBO hFE VCE(sat) fT Cob Conditions VCB = -10V, IE = 0 VCE = -10V, IB = 0 IC = -10A, IE = 0 IC = -1mA, IB = 0 IE = -10A, IC = 0 VCE = -10V, IC = -2mA IC = -10mA, IB = -1mA VCB = -10V, IE = 2mA, f = 200MHz VCB = -10V, IE = 0, f = 1MHz -50 -50 -5 200 - 0.1 250 1.5 500 - 0.3 V MHz pF min typ max - 0.1 -100 Unit A A V V V *h FE Rank classification Rank hFE Marking Symbol Q 200 ~ 400 ALQ R 250 ~ 500 ALR 0 to 0.1 0.20.1 +0.1 s Absolute Maximum Ratings 1 Transistor PC -- Ta 150 -120 Ta=25C 125 -100 -50 2SA1791 IC -- VCE -60 VCE=-10V 25C Ta=75C -40 -25C IC -- VBE Collector power dissipation PC (mW) Collector current IC (mA) 100 -80 IB=-300A -250A 75 -60 Collector current IC (mA) -200A -150A -30 50 -40 -100A -20 -20 25 -50A -10 0 0 20 40 60 80 100 120 140 160 0 0 -2 -4 -6 -8 -10 -12 0 0 - 0.2 - 0.4 - 0.6 - 0.8 -1.0 -1.2 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) -100 -30 -10 -3 -1 IC/IB=10 600 hFE -- IC 600 VCE=-10V fT -- IE VCB=-10V Ta=25C Forward current transfer ratio hFE 500 Ta=75C 400 25C -25C 300 Transition frequency fT (MHz) -3 -10 -30 -100 500 400 300 - 0.3 Ta=75C 25C -25C - 0.1 - 0.03 - 0.01 -1 200 200 100 100 -3 -10 -30 -100 -300 -1000 0 - 0.1 - 0.3 -1 0 0.1 0.3 1 3 10 30 100 Collector current IC (mA) Collector current IC (mA) Emitter current IE (mA) Cob -- VCB 6 Collector output capacitance Cob (pF) 5 IE=0 f=1MHz Ta=25C 4 3 2 1 0 -1 -3 -10 -30 -100 Collector to base voltage VCB (V) 2 |
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